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  • Hongil Yoon, Jae Yoon Sim, +13 authors Chang G. Hwang
  • Computer Science
  • IEEE International Solid-State Circuits…
  • 2001 (First Publication: 5 February 2001)
  • A 1.8 V 4 Gb DDR SDRAM for low voltage and high speed at full density has reduced inter-bitline coupling noise in the twisted open bit line architecture. Amplifier sensitivity and sensing margin areExpand