Dong-Hyeok Son

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The layout of modern field-effect transistors (FETs) is rapidly moving toward three-dimensional structures to reduce the off-state currents and improve the subthreshold characteristics, allowing for the reduction of supply voltage and dynamic power consumption in integrated circuits [1]. The gate-all-around (GAA) structure has been already proven [2] in Si(More)
In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the(More)
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