Dong Eun Yoo

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SUMMARY We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiN x for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO 2 /Si substrates at 100 • C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-µm and channel(More)
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