Donald L. Wollesen

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Sub-quarter micron MOSFET’s and ring oscillators with 2.5–6 nm physical gate oxide thicknesses have been studied at supply voltages of 1.5–3.3 V. Idsat can be accurately predicted from a universal mobility model and a current model considering velocity saturation and parasitic series resistance. Gate delay and the optimal gate oxide thickness were modeled(More)
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