Donald A. Gajewski

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SiC power devices offer performance advantages over competing Si-based power devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings (up to 10 kV), and with lower switching losses. The reliability of SiC power devices is excellent and has(More)
Experimental efforts to characterize and develop an understanding of non Fermi liquid (NFL) behavior at low temperature in f-electron materials are reviewed for three f-electron systems: Ml-zUxPda (M = Se, Y), Ul-zThxPd:Al3, and UCu5_~Pdx. The emerging systematics of NFL behavior in f-electron systems, based on the present sample of nearly ten f-electron(More)
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