Donald A. Gajewski

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This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The Cree V3 process technology is based on a 0.4 µm gate length GaN HEMT designed for 28 V applications and includes metal-insulator-metal (MIM) capacitors, NiCr thin film(More)
Citation Demirtas, Sefa, et al. "Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0 C operation and(More)
SiC power devices offer performance advantages over competing Si-based power devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings (up to 10 kV), and with lower switching losses. The reliability of SiC power devices is excellent and has(More)
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