Don L. Morel

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Thin film CdS/CdTe solar cells of the substrate configuration (foil/back contact (BC)/CdTe/CdS/TCO) have been prepared on the molybdenum (Mo)-coated stainless steel substrates. Copper (Cu) is introduced in the cell by briefly immersing the device in a CuCl solution at different stages of the fabrication process in order to study the effect of Cu on cell(More)
In spite of the highly successful development of CIGS at the laboratory level, successful commercialization of the technology has not yet been demonstrated. This is largely due to limited understanding and control of the growth mechanisms. We have developed extensive understanding of these mechanisms for all solid state processing of CIGS(This is a 2-step(More)
The effect of the vapor phase Cadmium (Cd) to Tellurium (Te) ratio on the electronic properties of CdTe films is being studied. The stoichiometry of CdTe films is being altered by varying the gas phase Cd/Te ratio during the Elemental Vapor Transport (EVT) deposition process. Resistivity-temperature measurements and solar cells made with polycrystalline(More)
A common feature of the most efficient laboratory scale CdS/CdTe solar cells has been the use of close-spaced sublimation (CSS) for the deposition of CdTe [1]. In this study, the growth of CdTe and ZnTe thin films deposited on flexible foil substrates by CSS has been investigated in order to study their structural properties for solar cell applications.(More)
The formation of a low resistance ohmic contact on p-type CdTe is a significant challenge for the superstrate solar cell configuration, where surface preparation techniques including wet etches are often used in order to modify the surface of CdTe prior to applying the contact material(s). It is even a greater challenge for the less commonly used substrate(More)
Cu<sub>2</sub>ZnSnSe<sub>4</sub> has shown promise as a potential follow-on for CIGS because of the replacement of In with earth abundant Zn and Sn. At this early stage of development and because of its complexity little is known about its fundamental properties. The band gap in particular seems to vary even for the same film composition. In this paper we(More)
The formation of low resistance ohmic contacts on p-type CdTe is a major challenge for the superstrate solar cell the dominant device configuration for this technology. It is even a greater challenge for the substrate configuration, since the back contact material is deposited first and is therefore influenced by subsequent high temperature fabrication(More)
The stoichiometry of CdTe plays an important role in the formation of point defects and can therefore impact solar cell performance. In this study, the effect of Cu and Cl on CdTe films is investigated as a function of stoichiometry. The stoichiometry of CdTe films was altered by varying the gas phase composition (amount of Cd and Te vapors) during the(More)
The effect of in-situ Antimony (Sb) doping on polycrystalline Cadmium Telluride (CdTe) deposited by Elemental Vapor Transport (EVT) is investigated. The presence of Sb in the film is verified by SIMS measurements. The film structures were studied by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) measurements. The Sb doped CdTe films were(More)
Although CIGS technology has not yet demonstrated large volume commercial success, ongoing investment in manufacturing facilities is being made because of its outstanding potential. It is clearly not straightforward to transfer a high performance laboratory process to a manufacturing line. Manufacturing issues such as throughput, yield and materials(More)