Dominique M. M.-P. Schreurs

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To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the(More)
This paper is devoted to examining the ability of artificial neural networks to model the forward transmission coefficient, which represents an important figure of merit for microwave transistors. This analysis is carried out for two different on-wafer devices, namely GaAs HEMT and Si FinFET. As far as the HEMT technology is concerned, the model is(More)
Telehealth systems and applications are extensively investigated nowadays to enhance the quality-of-care and, in particular, to detect emergency situations and to monitor the well-being of elderly people, allowing them to stay at home independently as long as possible. In this paper, an embedded telehealth system for continuous, automatic, and remote(More)
This paper describes and discusses the implementation of a project-based graduate design course in telecommunications engineering. This course, which requires a combination of technical and soft skills for its completion, enables guided independent learning (GIL) and application of technical knowledge acquired from classroom learning. Its main(More)
This paper reviews up-to-date Chireix outphasing power amplifier configurations and proposes a compact adaptive power combining network. It yields a lower loss and compact size over conventional architectures. Multilevel drive modulation is introduced to further improve the efficiency at low power level. The proposed concept was verified by standard CMOS(More)
In this paper, the centroidal Voronoi tessellation (CVT) is proposed as a design of experiments (DoE) for the nonlinear modeling of active devices. Different method’s flavors are being described, allowing to maximize the total amount of information gathered during measurements. As a case study, the CVT designs have been tested for both(More)
In this paper, a compact power amplifier module integrated in a thin film multi-chip module (MCMD) interconnect technology is presented. The active device of the amplifier is a SiC based AlGaN/GaN high electron mobility transistor (HEMT). Measurement results show that the prototype module can exhibit an output power of 1.6 W and a drain efficiency of 28% at(More)