Dominique M. M.-P. Schreurs

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—To model nonlinear device behavior at microwave frequencies , accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome , as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of(More)
M ultisine signals are used in the laboratory and in the field to provide a periodic, well-characterized wave-form that can simulate complex modulated radio frequency (RF) signals. For example, in the field of wireless telecommunications, multisines are often used to provide realistic test signals that have statistics similar to various types of digitally(More)
A powerful and systematic approach to behavioral modeling of nonlinear microwave/RF circuits in the time domain is presented, integrating several techniques from nonlinear dynamical systems analysis. Algorithms based on information-theoretic principles help determine efficient trade-offs between model accuracy, speed, and complexity. Models are constructed(More)
The standard empirical non-linear model parameter estimation is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full two-port vectorial large-signal measurements. Furthermore realistic operating conditions can easily be included in the optimisation(More)
component of this work in other works must be obtained from the IEEE. Abstract — A black box model is proposed to describe nonlinear devices in the frequency domain. The approach is based upon the use of describing functions and allows a better description of hard nonlinearities than an approach based upon the Volterra theory. Simulations and experiments(More)
This paper describes and discusses the implementation of a project-based graduate design course in telecommunications engineering. This course, which requires a combination of technical and soft skills for its completion, enables guided independent learning (GIL) and application of technical knowledge acquired from classroom learning. Its main(More)
— The " Nonlinear Network Measurement System " accurately measures dynamic loadlines and breakdown currents of microwave transistors under high-frequency large-signal operating conditions. This measurement capability allows the designer to find optimal operating conditions for a given device without the need for large-signal models. Measuring RF breakdown(More)
This paper gives an overview of recently developed frequency domain measurement and modelling techniques for non-linear microwave components. The system architecture and measurement capabilities of the Hewlett-Packard " Non-linear Network Measurement System " are described. Three modelling techniques, based on the new instrument measurement data, are(More)
– This paper is devoted to examining the ability of artificial neural networks to model the forward transmission coefficient, which represents an important figure of merit for microwave transistors. This analysis is carried out for two different on-wafer devices, namely GaAs HEMT and Si FinFET. As far as the HEMT technology is concerned, the model is(More)