Dominique M. M.-P. Schreurs

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—To model nonlinear device behavior at microwave frequencies , accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome , as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of(More)
This paper describes and discusses the implementation of a project-based graduate design course in telecommunications engineering. This course, which requires a combination of technical and soft skills for its completion, enables guided independent learning (GIL) and application of technical knowledge acquired from classroom learning. Its main(More)
Telehealth systems and applications are extensively investigated nowadays to enhance the quality-of-care and, in particular, to detect emergency situations and to monitor the well-being of elderly people, allowing them to stay at home independently as long as possible. In this paper, an embedded telehealth system for continuous, automatic, and remote(More)
In this paper, we explore different implementation levels of RF power amplifiers, including a hybrid PCB approach and a system-in-package (SiP) approach based on low temperature co-fired ceramic (LTCC) technology. The selected device of the amplifier is a low cost Si based AlGaN/GaN high electron mobility transistor (HEMT). Measured results show that the(More)
– This paper is devoted to examining the ability of artificial neural networks to model the forward transmission coefficient, which represents an important figure of merit for microwave transistors. This analysis is carried out for two different on-wafer devices, namely GaAs HEMT and Si FinFET. As far as the HEMT technology is concerned, the model is(More)
We present results of a source-pull cold-hot on-wafer noise characterization of a FinFET with the gate 60 nm long and 45.6 µm wide. We performed this in the frequency range 0.8 – 8 GHz using the newest instrumentation available at present for measuring both scattering and noise parameters. From the output noise powers measured in frequency, we(More)
In this paper, we present a new dynamic-bias measurement setup and its application to the extraction of a nonlinear model for microwave field-effect transistors. The dynamic-bias technique has been recently proposed and relies on the use of low-frequency (LF) and high-frequency (HF) vector-calibrated measurements acquired, for instance, by means of a(More)