Dmitry A Svintsov

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Surface plasmon polaritons (SPPs) give an opportunity to break the diffraction limit and design nanoscale optical components, however their practical implementation is hindered by high ohmic losses in a metal. Here, we propose a novel approach for efficient SPP amplification under electrical pumping in a deep-subwavelength metal-insulator-semiconductor(More)
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density(More)
We theoretically examine the effect of carrier-carrier scattering processes on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphene. We demonstrate that the radiation absorption assisted by the carrier-carrier scattering is comparable with Drude absorption due to impurity(More)
The optimization of laser resonators represents a crucial issue for the design of tera-hertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed tera-hertz injection laser based on resonant radiative transitions between tunnel-coupled(More)
We report on the device model for the infrared photodetectors based on the van der Waals (vdW) heterostructures with the radiation absorbing graphene layers (GLs). These devices rely on the electron interband photoexcitation from the valence band of the GLs to the continuum states in the conduction band of the inter-GL barrier layers. We calculate the(More)
  • 1