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Transmitter and receiver circuits operating at 11 GHz system clock rate are described. These circuits, fabricated in a 0.8 µm SiGe-HBT technology, are the key elements of a radar head using a new ultra wideband principle.
Photonic BiCMOS is a novel technology for fabricating electronic-photonic integrated circuits. Broadband silicon photonics devices such as germanium photodiodes and depletion type Mach-Zehnder modulators were monolithically integrated in a high performance SiGe BiCMOS baseline process. Integration aspects and examples of demonstrator circuits shall be… (More)
A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high -3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 µm wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at… (More)
We present a photonic BiCMOS process enabling for monolithically integrated Si-based transceiver front-ends towards single-wavelength 400 Gb/s data rate by combining segmented Mach-Zehnder-Interferometer modulators and high-speed germanium photo detectors with high-performance electronics.
In this paper, a monolithically integrated segmented linear driver and Mach-Zehnder modulator (MZM) are presented. The transmitter is fabricated in electronic-photonic integrated circuit 0.25-μm SiGe:C BiCMOS technology, with f<sub>T</sub>/f<sub>max</sub> = 190 GHz. The driver and the modulator are divided into 16 segments and the MZM phase shifter… (More)
The performance of layered Pr<sub>2</sub>Ti<sub>2</sub>O<sub>7 </sub>/SiO<sub>2</sub> MIM capacitors for mixed-signal and RF device applications is presented for the first time. A capacitance density of 3.2 fF/mum<sup>2</sup> with a very low leakage parameter of 5 fA/pFV and quadratic voltage capacitance coefficient of -100 ppm/V<sup>2</sup> was achieved.… (More)