Didier Bouvet

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Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using multiple threshold voltages (<i>V</i><sub>T</sub>), which is enabled by our underlying technology. We(More)
—The fabrication of crossbar memories with sublitho-graphic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuitry that is defined on the lithography scale. In this paper, we evaluate the addressing scheme of the(More)
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