Dexin Wang

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Spin dependent tunneling (SDT) wafers were deposited using dc magnetron sputtering. SDT junctions were patterned and connected with one layer of metal lines using photolithography techniques. These junctions have a typical stack structure of Si(100)-Si/sub 3/N/sub 4/-Ru-CoFeB-Al/sub 2/O/sub 3/-CoFeB-Ru-FeCo-CrMnPt with the antiferromagnet CrMnPt layers for(More)
Spin-valves are applied in a variety of devices including magnetic sensors and isolators. The linear spin-valve sensing element is configured as a Wheatstone bridge consisting of four sensing resistors. The sensing devices are characterized by three parameters: the sensing field range, sensitivity and linearity. The devices using linear spin-valve sensing(More)
Microchips of 360/spl deg/ angle sensors using spin valve materials were designed, fabricated, and tested with excellent performance. The spin valve material used for the angle sensor has a structure of Ta-NiFeCo-CoFe-Cu-CoFe-Ru-CoFe-CrMnPt. External magnetic fields have little torque on the CoFe-Ru-CoFe structure up to at least 500Oe, which is the highest(More)
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