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ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/ Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts.(More)
White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. However, it is challenging to integrate various QD emitters into one device and also to obtain efficient blue QDs. Here, we report a simply solution-processed white QD-LED using a hybrid ZnO@TiO₂ as electron injection layer and(More)
We investigated photoluminescence ͑PL͒ from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si ͑100͒ by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0ϫ 10 18 cm −3. From free electron to acceptor transitions, acceptor binding energy of 0.14 eV is(More)
Antimony ͑Sb͒ doping was used to realize p-type ZnO films on n-Si ͑100͒ substrates by molecular beam epitaxy. These samples were fabricated into p-n heterojunction diodes. p-type behavior of Sb-doped ZnO was studied by carrying out I-V and capacitance-voltage ͑C-V͒ measurements. I-V curves showed rectifying behavior similar to a p-type Schottky diode with a(More)
We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed(More)
Reproducible Sb-doped p-type ZnO films were grown on n-Si ͑100͒ by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton ͑A ° X͒ emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is(More)
This article serves to build up a mobile learning system possessed of mining module through analysis and study of the characters, conducts, situation of mobile learners in terms of uncertainty of the time, place, and approach of mobile learning. The system, based on the course resources and mobile learning design for each team of students according to the(More)
Good mechanical properties and large adiabatic temperature change render Heusler-type Ni2FeGa-based magnetic shape memory alloys as a promising candidate material for solid-state mechanical cooling application at ambient conditions. Superelastic behavior and associated elastocaloric effect strongly reply on deformation conditions (e.g. applied strain rate(More)
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