Derrick VanGennep

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We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeI under applied pressures up to ∼2 GPa. We observe one high frequency oscillation at all pressures and one low frequency oscillation that emerges between ∼0.3-0.7 GPa indicating the appearance of a second small Fermi surface. BiTeI has a conduction band bottom(More)
We report a study of high pressure x-ray absorption (XAS) performed in the partial fluorescence yield mode (PFY) at the U L3 edge (0–28.2 GPa) and single crystal x-ray diffraction (SXD) (0–20 GPa) on the UCd11 heavy fermion compound at room temperature. Under compression, the PFY-XAS results show that the white line is shifted by +4.1(3) eV at the highest(More)
We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeCl under applied pressures up to  ∼2.5 GPa. We observe two distinct oscillation frequencies, corresponding to the Rashba-split inner and outer Fermi surfaces. BiTeCl has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling,(More)
At ambient pressure, BiTeI exhibits a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements(More)
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