Der-Feng Guo

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A novel InGaAs/GaAs superlattice-base heterostructure-emitter bipolar transistor (SB-HEBT) with structure is proposed and demonstrated by two-dimensional analysis. As compared to the traditional HEBT, the studied superlattice-base device exhibits a higher collector current, a higher current gain of 246 and a lower base-emitter (B-E) turn-on voltage of 16 mV(More)
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