Denise C. Lugo Muñoz

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A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the I D (V GS , V DS) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct(More)
An alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function based model allows the terminal current to be expressed as an explicit analytical function of the applied terminal voltage, in(More)
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