Demetrio Logoteta

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Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron(More)
We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our(More)
We compare the performance prospects of three recently proposed and demonstrated transistors based on vertical and lateral graphene-based heterostructures, with the requirements of the International Technology Roadmap for Semiconductors. All devices provide large Ion/Ioff ratios, but only the lateral heterostructure field-effect transistors exhibit(More)
We propose a model for the numerical simulation of a two-terminal scanning gate spectroscopy experiment on bilayer graphene in the Quantum Hall regime. We start from the Chalker-Coddington random network model and link the model parameters with some of the relevant quantities in the experimental setup. The comparison between the simulation and the(More)
We compute, using a continuum model based on the Dirac equation, the transverse modes and the longitudinal wave vectors in an armchair ribbon, in the presence of a transversally variable external potential. We show that the application of a standard finite difference method to this problem is not effective, since it can lead to the appearance of spurious(More)
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