Debanjan Jana

9Siddheswar Maikap
3Mrinmoy Dutta
2Subhranu Samanta
2Sheikh Ziaur Rahaman
Learn More
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2(More)
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a(More)
  • Siraj Datta, Debanjan Jana, Tilak Raj Maity, Aveek Samanta, Rajarshi Banerjee
  • 2016
Quorum sensing (QS) plays an important role in virulence of Pseudomonas aeruginosa, blocking of QS ability are viewed as viable antimicrobial chemotherapy and which may prove to be a safe anti-virulent drug. Bioactive components from Piper betle have been reported to possess antimicrobial ability. This study envisages on the anti-QS properties of ethanolic(More)
A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and(More)
Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO x layer with a thickness of 7 nm. A thin layer of TiO x N y with a thickness of 3 nm is formed at the TaO x /TiN interface, owing to the(More)
Enhanced resistive switching phenomena of IrOx/GdOx/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd2O3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching(More)
Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching(More)
It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale Res. Lett., 2015, however, optical switching characteristics(More)
Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdOx film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a transmission electron microscope (TEM) image. All elements and(More)
  • 1