A monolithic CMOS microhotplate-based gas sensor system
- M. AfridiJ. Suehle C. J. Taylor
- 1 December 2002
Engineering, Physics
A monolithic CMOS microhotplate-based conductance-type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures that serve as sensing film…
Power MOSFET temperature measurements
- D. BlackburnD. Berning
- 14 June 1982
Engineering, Physics
1982 IEEE Power Electronics Specialists…
Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the…
Characteristics and utilization of a new class of low on-resistance MOS-gated power device
- Jih-Sheng LaiB. SongRui ZhouAllen R. HefnerD. BerningChih-Chieh Shen
- 3 October 1999
Engineering, Physics
Conference Record of the 1999 IEEE Industry…
Overall, the Cool MOS/sup TM/ was found to behave more like a power MOSFET than like an IGBT.
High speed IGBT module transient thermal response measurements for model validation
- D. BerningJ. ReichlAllen R. HefnerM. HernandezC. EllenwoodJih-Sheng Lai
- 12 October 2003
Engineering, Physics
38th IAS Annual Meeting on Conference Record of…
A test system is introduced and applied for validation of dynamic electro-thermal models of multichip insulated gate bipolar transistor (IGBT) modules. The test system operates the IGBT in a pulsed…
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- T. McNuttA. HefnerA. MantoothJ. DuliereD. BerningR. Singh
- 2001
Engineering, Physics
2001 IEEE 32nd Annual Power Electronics…
Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and…
Micro-differential scanning calorimeter for combustible gas sensing
- R. CavicchiG. Poirier C. B. Montgomery
- 2004
Engineering, Materials Science
SiC power diodes provide breakthrough performance for a wide range of applications
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The…
MEMS-based embedded sensor virtual components for system-on-a-chip (SoC)
- M. AfridiA. Hefner S. Semancik
- 1 October 2004
Engineering
Thermal component models for electro thermal analysis of multichip power modules
- J. J. RodriguezJ. Reichl Jih-Sheng Lai
- 10 December 2002
Engineering, Physics
Conference Record of the 2002 IEEE Industry…
The paper presents model development and implementation in SABER, simulation results, and validation using experimental data, as well as parameterized in terms of structural and material parameters so that they can be readily used to develop a library of component models for the various commercially available power modules.
Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions
- J. KopanskiJ. MarchiandoD. BerningR. AlvisH. Smith
- 4 June 1998
Physics, Engineering
Cross-sectioned p+/p and p–n junction test structures were imaged with a scanning capacitance microscope (SCM). To maintain a constant difference capacitance, our SCM utilizes an electronic…
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