In this paper, using extensive TCAD simulations and measurement results, we analyze the basic mechanisms involved during an ESD stress in a self-biased NPN bipolar transistor used as an ESD protection. From the deep understanding of these mechanisms, we define design guidelines to achieve a very high ESD robustness (=10kV) in this type of device. These… (More)
This paper addresses an innovative solution to develop a circuit to perform accelerated stress tests of capacitive MEMS switches and shows the use of instruments and equipment to monitor physical aging phenomena. A dedicated test circuit was designed and fabricated in order to meet the need for accelerated techniques for those structures. It integrated an… (More)
This paper presents an experimental comparison of laser beam based techniques applied to a case study concerning ESD defect location. Thermal laser stimulation and non-biased optical beam induced current techniques are evaluated and discussed. Experimental results demonstrate the advantages and weak points of the two approaches.