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We have studied the transport properties of graphene transistors in different solvents with dielectric constant varying over 2 orders of magnitude. Upon increasing the dielectric constant, the carrier mobility increases up to 3 orders of magnitude and reaches approximately 7 x 10(4) cm(2)/v.s at the dielectric constant of approximately 47. This mobility(More)
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract—This brief aims to show the effects of threading edge dislocations(More)
The role of synchronism in systems of threshold elements (such as neural networks) is examined. Some important differences between synchronous and asynchronous systems are outlined. In particular, important restrictions on limit cycles are found in asynchronous systems along with multi-frequency oscillations which do not appear in synchronous systems. The(More)
Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This gives what is probably the intrinsic, phonon limited mobility at room temperature, and we have confirmed this with simulation. Mobility as high as 44 000 cm(2)(More)
We have carried out Hall measurement on back-gated graphene field effect transistors (FET) with and without a top dielectric medium. The gate efficiency increases by up to 2 orders of magnitude in the presence of a high κ top dielectric medium, but the mobility does not change significantly. Our measurement further shows that the back-gate capacitance is(More)
We study the transport of carriers in intrinsic graphene by means of an ensemble Monte Carlo technique. Scattering by acoustic and optical phonons dominates the transport. We find that velocity 'saturation' sets in at relatively low values of the electric field, but that the value is dependent upon the carrier density. Velocity overshoot is also observed to(More)
We study electronic transport in quantum-dot structures made of graphene. Focusing on the rectangular dot geometry and utilizing the non-equilibrium Green's function to calculate the transmission in the tight-binding framework, we find significant fluctuations in the transmission as a function of the electron energy. The fluctuations are correlated with the(More)
—Within the next decade, it is predicted that we will reach the limits of silicon scaling as it is currently defined. Of the new devices under investigation, one of the most promising is the tri-gate quantum-wire transistor. In this paper, we study the role quantum interference plays in the operation of this device both in the ballistic and quasi-ballistic(More)