Abstrati-The transport properties of holes in Si, _ ,Ge, are studied with a Monte Carlo technique. If the strain is applied to the Si, _ ,Ge, channel, it raises the degeneracy of the heavy-hole and light-hole bands: for compressive strain, the heavy-hole band lies at a higher energy than the light-hole band, while for tensile strain, the order reverses,… (More)
We argue that many major features in electronic transport in realistic quantum dots are not explainable by the usual semiclassical approach, due to the contributions of the quantum-mechanical tunneling of the electrons through the Kolmogorov-Arnol'd-Moser islands. We show that dynamical tunneling gives rise to a set of resonances characterized by two… (More)
The concentrations of wave functions about classical periodic orbits, or quantum scars, are a fundamental phenomenon in physics. An open question is whether scarring can occur in relativistic quantum systems. To address this question, we investigate confinements made of graphene whose classical dynamics are chaotic and find unequivocal evidence of… (More)
—Nanowires have become of great interest in recent years, and great promise has followed their development. In this paper, we review the role of ballistic transport, the ballistic-to-diffusive crossover, and the possible impact of nanowires in integrated circuits.
—As scaling and performance needs of industry has continued, silicon-on-insulator technology appears to be a viable option. However, the small sizes of these structures require a quantum treatment for the transport. In this paper, we present results from a full three-dimensional (3-D) quantum simulation and describe the effects of quantum interference and… (More)
—Within the next decade, it is predicted that we will reach the limits of silicon scaling as it is currently defined. Of the new devices under investigation, one of the most promising is the tri-gate quantum-wire transistor. In this paper, we study the role quantum interference plays in the operation of this device both in the ballistic and quasi-ballistic… (More)
Field-induced electron transport in an InGa1N (x 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the InGa1_N layer have been directly measured. The experimental results are compared with ensemble… (More)