David I. Shahin

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Vertical GaN Junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates. The p-type JBS gridded regions were formed by selective area doping by Mg ion implantation followed by an activation anneal. Implantation was performed into a 10 μm thick unintentionally doped GaN layer grown by metal organic(More)
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