David Fathi

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In this paper an accurate noise analysis for active mixers in 90 nm technology, based on the variations of the two parameters W/L (transistor size) and f<sub>LO</sub> (local oscillator frequency) is presented. The contribution of the gate resistance noise to the gate and drain total current noises is considered, whereas this noise is usually assumed to be(More)
Since 2010, advocates on the right and left have increasingly allied to denounce mass incarceration and propose serious reductions in the use of prisons. This alliance serves useful shared purposes, but each side comes to it with distinct and in many ways incompatible long-term interests. If progressive advocates rely solely on this alliance without(More)
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