David C. Gold

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Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 /spl mu/m based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm/sup 2/ were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can(More)
Wavelength conversion based on four-wave mixing (FWM) and cross-gain modulation (XGM) is experimentally demonstrated for the first time in a 1550-nm InAs-InP quantum-dash semiconductor optical amplifier. Continuous-wave FWM with a symmetric conversion efficiency dependence on detuning direction and FWM mediated short-pulse wavelength conversion are(More)
A lot of knowledge about the formation of InAs or InGaAs quantum dots on GaAs based materials was obtained within the last decade and high quality quantum dot lasers could be realized with emission wavelengths between I and 1.3 /spl mu/m. But the realization of quantum dot lasers well beyond 1.3 /spl mu/m is still difficult. Very recently first device(More)
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