David C. Gilmer

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Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage films with oxide equivalent thicknesses below 2.0 nm. Excellent electrical characteristics can be achieved, but TEM and electrical measurements have shown the presence of a low-resistivity interfacial layer that we take to be SiO(More)
Multilevel operation in resistive switching memory (RRAM) based on HfOx is demonstrated through variable sizes and orientations of the conductive filament. Memory states with the same resistance, but opposite orientation of defects, display a different response to an applied read voltage, therefore allowing an improvement of the information stored in each(More)
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