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A low-power silicon-tunnel-diode-based LC-tuned oscillator transmitter is proposed for high-temperature MEMS sensing and wireless data transmission applications. The prototype sensing and transmitting module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and a miniature on-board coil loop serving as the(More)
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A RF voltage-controlled oscillator (VCO) employs an on-chip, high-Q, three-dimensional (3-D) coil inductor and micro-machined variable capacitor for frequency tuning. Unlike conventional spiral inductors, the 3-D inductor minimizes the substrate loss and achieves a record Q of 30 at 1 GHz. The micromachined variable capacitor achieves a 15% tuning range(More)
We are developing a personal micronavigation system that uses high-resolution gait-corrected inertial measurement units. The goal of this project is to develop a navigation system that use secondary inertial variables, such as velocity, to enable long-term precise navigation in the absence of Global Positioning System (GPS) and beacon signals. In this(More)
—This paper presents a wireless power recharging system design for implantable bladder pressure chronic monitoring application. The power recharging system consists of an external 4-turn 15-cm-diameter powering coil and a silicone-encapsulated implantable spiral coil with a dimension of 7 mm x 17 mm x 2.5 mm and 18 turns, which further encloses an ASIC with(More)
High-performance interface electronics design for two MEMS-based wireless sensing applications, (1) strain sensing and (2) implantable blood pressure sensing, is presented. In a wireless MEMS strain sensing microsystem, a MEMS capacitive strain sensor is interfaced with a custom-designed ASIC consisting of a low-noise continuous-time synchronous-detection(More)
An RF low phase noise voltage-controlled oscillator is implemented with micro-machined IC-compatible variable capacitors and three-dimensional coil inductor. Unlike conventional on-chip passive devices, the micromachined variable capacitors achieve a high-Q value above 60 at 1 GHz with a 15% tuning range for a nominal 2 pF capacitance with 3 V tuning(More)