Darrell Niemann

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Intra-die random fluctuation outcomes inherent to fabrication processes such as gate LER give rise to corresponding fluctuations in device characteristics. These fluctuations become significant for devices with channel length less than 50 nm, a feature size rapidly approaching practical interest [1,2]. At this scale, the fringe electric field and the charge(More)
We present a fabrication technique for the integration of a gate electrode with an array of carbon nanotube (CNT) emitters. These gated cathode structures have high emission current density and may be utilized in X-ray tubes, traveling wave tubes, and ion propulsion systems. The CNT emitters are grown directly on polished bulk metal substrates and are(More)
Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this(More)
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