Daniele Passeri

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In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of dc, ac and transient responses of a single-sided, dc-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been(More)
The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics , as well as radiation-induced deep-level recombi-nation centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool,(More)
The science and technology of thin films require the development of nondestructive methods for their quantitative mechanical characterization with nanometric spatial resolution. High-frequency ultrasonic techniques--especially acoustic microscopy--and atomic force microscopy (AFM) have been demonstrated to represent versatile tools for developing such(More)
BACKGROUND Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level(More)
The adoption of overhanging-metal contacts have been suggested as an effective mean to limit breakdown risks in heavy-damaged, high-voltage biased microstrip detectors. In this summary, the influence of such overhangs on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of(More)
The changes of the electrical properties induced by hadron irradiation on silicon detectors have been studied by using the device level simulator HFIELDS. The model of the radiation damage assumes the introduction of radiation-induced acceptor and donor \deep-levels". The electric eld proole and the space charge region extension have been calculated for(More)
Magnetic force microscopy (MFM) has been demonstrated as valuable technique for the characterization of magnetic nanomaterials. To be analyzed by MFM techniques, nanomaterials are generally deposited on flat substrates, resulting in an additional contrast in MFM images due to unavoidable heterogeneous electrostatic tip-sample interactions, which cannot be(More)
Nanostructured Au nano-platelets have been synthesized from an Au(III) complex by growth process triggered by nanodiamond (ND). An electroless synthetic route has been used to obtain 2D Au/ND architectures, where individual nanodiamond particles are intimately embedded into face-centered cubic Au platelets. The combined use of high resolution transmission(More)