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The formation of photoinduced crystals and haze has become a challenge for 193nm photolithography high volume manufacturing (1-6). Extensive work has been performed to develop alternative to piranha… (More)
Meeting the stringent error budget of 157-nm lithography for manufacturing devices in the sub-100 nm regime requires that all mask-related distortions be minimized, corrected, or eliminated. Sources… (More)
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The absence of a reliable non-removable pellicle is a significant obstacle in the development of EUV lithography. In this paper we present analytical and experimental results of a pellicle concept.… (More)
Lithography registration errors induced by the attachment of soft pellicles on reticles can significantly affect wafer overlay performance for sub-90 nm lithography chip manufacturing. Intel… (More)
The more stringent image placement error budgets for 157-nm lithography require a total assessment of photomask distortion sources and their eventual control. This includes proposed soft pellicle… (More)
Photomask lifetime has become a challenge since the introduction of high volume manufacturing 193nm photolithograph. Photomask lifetime is being impacted by a broad range of environmental and process… (More)
A comprehensive design of experiment was elaborated to evaluate the effects of frame flatness, mask adhesive compliance, and mounting load on pellicle-induced distortions for soft pellicle systems. A… (More)
Lithography registration errors induced by the attachment of soft pellicles on reticles can significantly affect wafer overlay performance for sub-100 nm lithography chip manufacturing. Intel… (More)
The reticle manufacturing process induces various defects on the mask that need to be repaired. Missing absorber or clear defects are often repaired by depositing a carbon-based material (depo) using… (More)