Daniel Scain Farenzena

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As process technology has progressed to nanometric scale transistors gate length, faults regarding effects due to electromagnetic interference, free ions and particles have increased. Efforts to reduce this susceptibility were made in many works, as critical systems can have their functions severely affected. This work presents the use of digital(More)
As microelectronics evolves smaller into the nanometric scale, external interferences starts to be harmful to the system expected behavior. As classical systems do not handle adequately faults caused by such sources, new topologies are proposed. Our present work proposes a solution for this problem consisting on the use of sigma-delta modulation in order to(More)
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