Daniel Gloria

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Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area(More)
This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz ) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF m high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details(More)
This work describes an UWB impulse transmitter with integrated antenna in the 60 GHz band implemented in CMOS65nm SOI technology. The transmitter aims low-power short-range high data-rate communication systems for fast-downloading applications. It consists of an oscillator that is switched on-and-off by the digital data to be transmitted and a medium power(More)
This paper presents a new physical model for shielded slow-wave coplanar waveguide structures. This lossy electrical model is based on physical behavior of the transmission lines. It allows a better understanding of the losses distribution along the structure. The ohmic losses in the coplanar strips, as well as the ohmic losses and the eddy current losses(More)
Today, SiGe HBT and MOSFET cut-off frequencies are higher than 230 GHz (Chevalier et al., 2004) and this increase allows new millimeter wave (MMW) applications on silicon such as 60 GHz WLAN and 77 GHz automotive radar. This study focuses on a wireless communication block with the antenna integration. Functions such as amplifier and filter have been used to(More)
This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The(More)
There is considerable interest in wideband pulse modulation at mm-Wave frequencies for application in radar and medical imaging systems [1,2]. Accuracy and resolution in these respective systems are determined by the minimum pulse width (PW). PWs down to 300ps have previously been reported for 24/79GHz carrier frequencies [1,3]. This paper presents the(More)
This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.
Today, measurement of 65 nm CMOS and 130 nm-based SiGe HBTs technologies demonstrate both Ftau (current gain cut-off frequency) and Fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100 nm III-V HEMT. Consequently, the integration of full transceiver at 60 GHz has been achieved both in(More)
We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency fmaz (280 GHz), varactoi tuning range and varactor and inductor quality factor. gration design rules the source and drain interconnect is made wider than the minimum design rule and realized in(More)