Daniel E. Shai

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Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr_{2}RuO_{4} and its isoelectronic counterpart Ba_{2}RuO_{4} using oxide molecular beam epitaxy, in situ angle-resolved photoemission spectroscopy, and transport measurements. Near the topological(More)
We report the scalable growth of aligned graphene and hexagonal boron nitride on commercial copper foils, where each film originates from multiple nucleations yet exhibits a single orientation. Thorough characterization of our graphene reveals uniform crystallographic and electronic structures on length scales ranging from nanometers to tens of centimeters.(More)
Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides that host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap(More)
We describe a tunable low-energy photon source consisting of a laser-driven xenon plasma lamp coupled to a Czerny-Turner monochromator. The combined tunability, brightness, and narrow spectral bandwidth make this light source useful in laboratory-based high-resolution photoemission spectroscopy experiments. The source supplies photons with energies up to ~7(More)
We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO(3). The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by(More)
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarization. Combining(More)
Rare earth doping is the key strategy to increase the Curie temperature (T(C)) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T(C) increase, however, are yet to be understood. We report measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels. The results show a(More)
Sr1−xLaxCuO2 John W. Harter, ∗ Luigi Maritato, 3 Daniel E. Shai, Eric J. Monkman, Yuefeng Nie, 2 Darrell G. Schlom, 4 and Kyle M. Shen 4, † Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA(More)
D. E. Shai,1 M. H. Fischer,1,2 A. J. Melville,3 E. J. Monkman,1 J. W. Harter,1 D. W. Shen,1,4 D. G. Schlom,3,5 M. J. Lawler,1,6 E.-A. Kim,1 and K. M. Shen1,5,* 1Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA 2Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot(More)
The asymmetry between electron and hole doping remains one of the central issues in high-temperature cuprate superconductivity, but our understanding of the electron-doped cuprates has been hampered by apparent discrepancies between the only two known families: Re(2-x)Ce(x)CuO4 and A(1-x)La(x)CuO2. Here we report in situ angle-resolved photoemission(More)