Dan Denninghoff

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This paper reports on a novel low noise gate termination-less Cascode distributed amplifier (DA) MMIC based on a 0.15 m GaN-HEMT 6-inch wafer process technology. To the author's knowledge, the 100MHz-45 GHz BW with greater than 10 dB gain is the widest reported for a GaN HEMT distributed amplifier (for practical gain > 10dB) and the first published(More)
This paper reports on a novel 0.1-44 GHz linear common-drain-Cascode (CD-Cascode) GaN distributed amplifier architecture with improved IP3-BW performance. The CD-Cascode DA MMIC is based on a 0.15μm GaN-HEMT wafer process technology. By exploiting the common-drain-Cascode as a transconductance device cell, an improvement in IP3 of 9 dB at mid-band(More)
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