Daiki Wakimoto

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&#x03B2;-Ga<inf>2</inf>O<inf>3</inf> is a suitable material for next-generation high-power devices because it has excellent material properties and mass productivity. In the past, we have demonstrated field-plated Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes (SBDs) with nearly ideal reverse characteristics limited mainly by the thermionic field(More)
  • Kelson D. Chabak, Jonathan P. McCandless, +12 authors Gregg Huascar Jessen
  • IEEE Electron Device Letters
  • 2018
We report enhancement-mode <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> (BGO) MOSFETs on a Si-doped homoepitaxial channel grown by molecular beam epitaxy. A gate recess process is used to partially remove the epitaxial channel under the 1-<inline-formula> <tex-math notation="LaTeX">$\mu(More)
We developed <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Si-doped Ga<sub>2</sub>O<sub>3</sub> layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped <inline-formula> <tex-math notation="LaTeX">$\beta(More)
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