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We observed strong band edge luminescence at 8.5–200 K from 200–880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron… (More)
Abstract We have investigated influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by electron… (More)
For the first time, we observed strong band-edge photoluminescence at 1.814 eV, and two stronger emissions at 1.880 and 2.081 eV at 8.5 K from the respective 880 nm thick InN heteroepitaxial layers… (More)
High luminescence efficiency zincblende-GaN (β-GaN) crystal islands were preferentially grown on Si at initial growth process, particularly on non-pretreated (001)-oriented Si. The initial growth… (More)
Abstract We have investigated the mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radial molecules and nitrogen molecular ions on optical and crystallographic… (More)