Dai Hisamoto

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INTRODUCTION THE semiconductor industry that has witnessed such remarkably sustained and rapid growth for more than 40 years is now in the early years of the 21st century beginning to undergo a fundamental change in the way further performance gains will be achieved. To shed light on this development, this paper reviews the current state of research and(More)
  • D. Hisamoto
  • Proceedings. 7th International Conference on…
  • 2004
A great deal of attention has been paid to FD-SOI and multi-gate devices because they show promise in overcoming device scaling limits. Here, many reported types of fin-channel devices are reviewed regarding their potential as technology boosters for post-CMOS scaling. This paper demonstrates that double-, triple-, and quadruple-gates have different(More)
Some solutions are proposed and evaluated by simulation after the challenges facing the creation of 0.5-V nanoscale SoCs are clarified. First, the repair techniques and nanoscale FD-MOSFETs are discussed in terms of their V<inf>t</inf>-variation. Second, 0.5-V dual-V<inf>DD</inf> dual-V<inf>t</inf> logic circuits with gate-source reverse-biasing schemes are(More)
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