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We report excellent switching uniformity and reliability of RRAM device with ZrO<inf>x</inf>/HfO<inf>x</inf> bi-layer films. Precise control of the oxygen vacancy concentration in HfO<inf>2</inf>(More)
In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results,(More)
To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO<sub>2</sub>/Pt device with a memory-switching (MS)(More)