Dae-Young Jeon

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Evolution of a single graphene layer with disorder generated by remote oxygen plasma irradiation is investigated using atomic force microscopy, Raman spectroscopy and electrical measurement. Gradual changes of surface morphology from planar graphene to isolated granular structure associated with a decrease of transconductance are accounted for by(More)
Static and low frequency noise (LFN) characterrizations in densely packed single-walled carbon nanotube thin film transistors (CNT-TFTs) are presented. To this end, the Y function method (YFM) is employed for parameter extraction in order to alleviate the influence of the channel access resistance. The low field mobility (&#x03BC;<sub>0</sub>), threshold(More)
Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to(More)
In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated (TIG) Si-FinFETs with Schottkybarrier (SB) has proven to bring both functionalities even in a single(More)
Biological materials with surface-active proteins can be genetically modified to bind target materials. In particular, filamentous-shaped M13 bacteriophages (M13 phage) are attractive scaffolds for functional nanostructures due to their highly ordered protein-coat surface. This paper demonstrates a simple method for fabricating silica nanocables along a(More)
In this paper the operation mechanism of ambipolar Si-nanowire (Si-NW) Schottky-barrier (SB) FETs is discussed in detail using temperature dependent current-voltage (I-V) contour maps. Thermionic and field emission mechanism limited the overall conduction behavior of ambipolar Si-NW SB-FETs with considerable SB-height. However, Si-channel dominant(More)
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