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Layered structures of transition metal dichalcogenides stacked by van der Waals interactions are now attracting the attention of many researchers because they have fascinating electronic, optical, thermoelectric, and catalytic properties emerging at the monolayer limit. However, the commonly used methods for preparing monolayers have limitations of low(More)
A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due(More)
There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of(More)
Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode(More)
a r t i c l e i n f o Keywords: ab initio double defect method cluster expansion thermal modeling solid solutions The thermodynamic mixing functions of MgSiO 3 –Al 2 O 3 solid solutions in perovskite and ilmenite structures were modeled based on the results of ab initio calculations applied to a set of supercell structures containing 64 and 48 exchangeable(More)
Graphene produced by chemical-vapor-deposition inevitably has defects such as grain boundaries, pinholes, wrinkles, and cracks, which are the most significant obstacles for the realization of superior properties of pristine graphene. Despite efforts to reduce these defects during synthesis, significant damages are further induced during integration and(More)
Recall that we have reduced the 1–2% shrinkage tolerance commonly specified by laboratories to about a quarter by taking into account Ref. 10. However, the fabricated circuit has entirely exhausted the envisaged range. Yet, the insertion loss is still very good. Within the envisaged band, the reflection coefficient remains <À10 db, for 74.5 GHz and above at(More)
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