Dae Kon Oh

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We report a tunable external cavity laser (T-ECL) using a superluminescent diode (SLD) and a polymer Bragg reflector with 0.8-nm mode spacing 25 channels operating in the direct modulation of 2.5 Gb/s for a low-cost source of a wavelength division multiplexed passive optical network (WDM-PON) system. The maximum output power is 12.2 mW and the slope(More)
We presented a hybridly-integrated tunable external cavity laser with 0.8 nm mode spacing 16 channels operating in the direct modulation of 2.5-Gbps for a low-cost source of a WDM-PON system. The tunable laser was fabricated by using a superluminescent diode (SLD) and a polymer Bragg reflector. The maximum output power and the power slope efficiency of the(More)
We report a 1.58 μm superluminescent diode (SLD) with a spot-size converter (SSC) designed and fabricated as a light source for a tunable external cavity laser (T-ECL). The active section of the SLD is fabricated by using a planar buried heterostructure (PBH) for low-threshold current and high-output power operation at a low injection current. The SSC(More)
We have fabricated a tunable external cavity laser (T-ECL) based on a superluminescent diode and a polymeric waveguide Bragg reflector, providing a cost-effective solution for wavelength division multiplexing-passive optical network (WDM-PON) systems. The wavelength of the T-ECL is tuned through 100 GHz-spacing 16 channels by the thermo-optic tuning of the(More)
For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 degrees C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 degrees C and then, decreased with (-)0.419 nm/K above 50 degrees C. The temperature-induced shift in the lasing wavelength(More)
We successfully fabricated a very compact tunable laser based on a superluminescent diode and a polymeric waveguide Bragg reflector for WDM-PON colorless light source. The tunable laser had a wavelength tuning range of 15 by thermo-optic tuning of the polymer waveguide at a low input power of 70 mW. This module operated in the direct modulation for(More)
We report the influences of a dot-in-a-well structure with a thin GaAs layer and the thickness of a waveguide (WG) on the lasing characteristics of InAs quantum dots (QDs) based on InP. The QD laser diodes (QDLDs) consist of seven-stacked InAs QDs separated by a 10 nm-thick InGaAsP (1.15 μm, 1.15Q-InGaAsP) layer, which is further sandwiched by a 800(More)
For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs/InAlGaAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 mum were fabricated. Single-mode lasing operation around the wavelength of 1.56 mum was successfully achieved under the(More)
For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 mum were fabricated. Single-mode lasing operation around the wavelength of 1.56 mum was successfully achieved under the pulsed(More)
Recently, there have been many efforts on developing loss coupled (LC) laser diodes, one type of complex coupled (CC) DFB-LD, using a periodic light intensity change by an absorption medium adjacent to an active layer. In practice, the fabrication of LC DFB-LD is more stable and more reproducible compared to gain coupled (GC) DFB-LDs which use active layer(More)