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A reaction of urea, o-phthalaldehyde and N-(1-naphthyl)ethylenediamine is described for measurement of urea by manual, continuous-flow, and kinetic methods. The continuous-flow system requires 25 mu-l of sample; 40 samples can be analyzed per hour. The kinetic method requires no enzymes, has no lag phase, and has good sensitivity. A major advantage of the(More)
Graphene has attracted great attention owing to its unique structural and electrical properties. Among various synthetic approaches of the graphene, metal assisted chemical vapor deposition (CVD) is the most reasonable and proper method to produce large-scale and low-defect graphene films. Until now, CVD from gaseous hydrocarbon sources has shown great(More)
We report an approach for the synthesis of mono- or bilayer graphene films by atmospheric-pressure chemical vapor deposition that can achieve a low defect density through control over the growth time. Different heating ramp rates were found to lead to variation in the smoothness and grain size of the Cu foil substrate, which directly influenced the density(More)
The Parekh-Jung method for determination of inorganic phosphorus in serum was applied to its determination in urine. Accuracy is good. The mean percentage recovery of added phosphorus was 100.2%. Forty analyses of a sample gave a mean value of 46.71 mg/100 ml +/- 0.76 standard deviation (between-batch precision). The relative usefulness of the Parekh-Jung(More)
A new method for the determination of serum creatine, based on its reaction with 3,5-dinitrobenzoyl chloride in an organic medium is described. Various analytical parameters are studied and comparisons are made with the routine picrate procedures, as well as the dinitrobenzoic acid methods reported in the literature. On the basis of the data submitted, the(More)
We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene.(More)
The epitaxial growth of 1D nanostructures is of particular interest for future nanoelectronic devices such as vertical field-effect transistors because it directly influences transistor densities and 3D logic or memory architectures. Silicon nanowires (SiNWs) are a particularly important 1D nanomaterial because they possess excellent electronic and optical(More)