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We present data showing a new total-dose-induced parasitic effect in enclosed-geometry transistors. A model for this new effect shows that the normal radiation-induced edge leakage current becomes… (More)
The response of silicon solar cell(s) to pulsed laser illumination is discussed. The motivation was due to the interest of Earth to space/Moon power beaming applications. When this work began, it was… (More)
Static random access memory (SRAM) cells have diminishing read and write margins due to fabrication variations. These variations are a direct result of the small device sizes necessary to maintain… (More)
The RBS measurements of the samples irradiated by a single laser (singlepulse) with the 34 ns width at laser fluence of 2.0 J/cm2 revealed that the depth of arsenic doped layer reached a depth of… (More)