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A 90 nm DRAM technology has been successfully developed using 512 Mb DRAM for the first time. ArF lithography is used for printing critical layers with resolution enhancement techniques. A novel… (More)
A 512 Mb DRAM using a recessed channel array transistor with asymmetric channel doping scheme (RCAT-ASC) is fabricated for the first time with 80 nm feature size. We have found that RCAT-ASC shows… (More)
As the technology node of DRAM goes below 100 nm, the dimensional scaling of the devices greatly influences the major parameters that determine the performance of DRAM. Especially, the reduction of… (More)