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Single-Domain Circular Nanomagnets
The magnetic properties of deep submicron circular nanomagnets fabricated by high-resolution electron beam lithography from Supermalloy Ni80Fe14Mo5 have been studied as a function of both diameterExpand
Chemical mapping and formation of V-defects in InGaN multiple quantum wells
InGaN multiple-quantum-well structures grown by metal–organic chemical-vapor deposition on GaN and capped by p-type GaN are found to contain inverted pyramids of indium-free GaN. High-resolutionExpand
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good surface morphology are required for the development of commercial high power, high frequency transistors in theExpand
Growth of niobium nitride/aluminium nitride trilayers and multilayers
Abstract We examine the epitaxial growth of sputtered-deposited NbN/AIN/NbN trilayers on A- and C-plane sapphire and MgO(001), MgO(110) and MgO(111) substrates using transmission electron microscopy.Expand
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates
Abstract When epitaxial GaN is grown on (001) and ( 1 ¯ 1 ¯ 1 ¯ ) B oriented GaAs and GaP substrates by MBE, pits are found to develop in the substrate. Complementary cross-sectional and plan viewExpand
The fabrication and characterization of NbCN/AlN heterostructures
Very high quality niobium nitride based superconductor-insulator-superconductor (SIS) junctions have been prepared using aluminium nitride barrier layers deposited by dc reactive magnetronExpand
Interface structure and overgrowth orientation for niobium and molybdenum films on sapphire substrates. II: R-plane substrates
Abstract We show that when niobium and molybdenum films are sputter deposited on R-plane sapphire substrates, {001} growth is misoriented, and the angle of misorientation is different for the twoExpand
Chemical mapping of InGaN MQWs
High power LEDs fabricated from InGaN/GaN layers have received much research interest. Hence, in this paper we identify structural and chemical defects resulting from the epitaxial growth of theseExpand
The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN
Although GaN has been grown mainly by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) offers the advantages of lower growth temperatures and a more flexible control overExpand