The missing memristor found
- D. Strukov, G. Snider, D. Stewart, R. Williams
- PhysicsNature
- 1 May 2008
It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
The missing memristor found
- D. Strukov, G. Snider, D. Stewart, R. Williams
- EconomicsNature
- 1 June 2009
This corrects the article DOI: 10.1038/nature06932
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- J. Borghetti, G. Snider, P. Kuekes, J. Yang, D. Stewart, R. Williams
- EngineeringNature
- 8 April 2010
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.
Memristive switching mechanism for metal/oxide/metal nanodevices.
- J. Yang, M. Pickett, Xuema Li, D. Ohlberg, D. Stewart, R. Williams
- ChemistryNature Nanotechnology
- 15 June 2008
Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Memristive devices for computing.
- J. Yang, D. Strukov, D. Stewart
- ChemistryNature Nanotechnology
- 2013
The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Switching dynamics in titanium dioxide memristive devices
- M. Pickett, D. Strukov, R. Williams
- Chemistry
- 9 October 2009
Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches…
Nanoscale molecular-switch crossbar circuits
- Yong Chen, G. Jung, R. Williams
- Physics
- 1 April 2003
Molecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and…
The mechanism of electroforming of metal oxide memristive switches
- J. Joshua Yang, F. Miao, R. Williams
- Materials ScienceNanotechnology
- 27 May 2009
The nature of the oxide electroforming as an electro-reduction and vacancy creation process caused by high electric fields and enhanced by electrical Joule heating is explained with direct experimental evidence.
A hybrid nanomemristor/transistor logic circuit capable of self-programming
- J. Borghetti, Zhiyong Li, R. Williams
- EngineeringProceedings of the National Academy of Sciences
- 10 February 2009
The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information.
Nanoscale molecular-switch devices fabricated by imprint lithography
- Yong Chen, D. Ohlberg, E. Anderson
- Physics, Chemistry
- 4 March 2003
Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography.…
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