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The missing memristor found
This corrects the article DOI: 10.1038/nature06932
The missing memristor found
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned… Expand
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- J. Borghetti, G. Snider, P. Kuekes, J. Yang, D. Stewart, R. Williams
- Physics, Computer Science
- 8 April 2010
We show that memristive switches can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Expand
Memristive switching mechanism for metal/oxide/metal nanodevices.
- J. Yang, M. Pickett, X. Li, D. Ohlberg, D. Stewart, R. Williams
- Materials Science, Medicine
- Nature nanotechnology
- 15 June 2008
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties… Expand
Memristive devices for computing.
Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. Expand
Switching dynamics in titanium dioxide memristive devices
Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches… Expand
Nanoscale molecular-switch crossbar circuits
Molecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and… Expand
The mechanism of electroforming of metal oxide memristive switches.
Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields--through 'electroforming' or 'breakdown'--critically… Expand
A hybrid nanomemristor/transistor logic circuit capable of self-programming
- J. Borghetti, Zhiyong Li, +5 authors R. Williams
- Computer Science, Medicine
- Proceedings of the National Academy of Sciences
- 10 February 2009
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. Expand
Nanoscale molecular-switch devices fabricated by imprint lithography
Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography.… Expand