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Negative bias temperature instability (NBTI) is studied in plasma (PNO) and thermal (TNO) Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaV<sub>T</sub>) and its field(More)
Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift(More)