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Front and back surface cw CO2-laser annealing of arsenic ion-implanted silicon

The annealing behavior of arsenic-implanted silicon under scanned cw CO2-laser irradiation from front and back surfaces is investigated. Ellipsometry, Hall effect, Rutherford backscattering…
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Nd:YAG laser annealing of arsenic‐implanted silicon: Relaxation of metastable concentrations by means of CO2‐laser irradiation

The relaxation of supersaturated arsenic concentrations resulting from Nd:YAG laser annealing of implanted silicon was investigated, using a thermal post‐treatment with a stationary 40‐W CO2−laser…
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Nd:YAG laser annealing of arsenic‐implanted silicon: Dependence upon scanning speed and power density

The annealing behavior of arsenic‐implanted silicon using Nd:YAG laser irradiation was investigated. The annealing process depended upon the scanning speed and the power density. The carrier…
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Annealing of boron‐implanted silicon using a CW CO2 Laser

Solid-phase epitaxial regrowth of boron ion-implanted silicon is obtained with scanned CW CO2 laser irradiation from the back surface. The crystal damage recovery, electrical activity, and…
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CW CO2-laser annealing of arsenic implanted silicon

CW CO2-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize…
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Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were…
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Annealing of Boron-Implanted Silicon Using a CW CO2 Laser

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Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs1−xPx (x=0.4; 0.65) at room temperature at various doses from 5×1012 cm−2 to 5×1015 cm−2 and annealed at temperatures from 600°C up to 950°C using a sputtered SiO2…
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Ionisation of fast Rydberg ions in collisions with target atoms

Rydberg ions with orbital dimensions up to approximately 1000 a,, are found to traverse thin gas targets fairly undisturbed, indicating relatively small ionisation cross sections ui. Theoretical…
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Comment on "Electric field ionization of foil-excited Rydberg states of fast heavy ions"

We comment on the suitability of field ionization and x-ray observation for the investigation of Rydberg states in ion-atom collisions and clarify apparent discrepancies which have been recently…
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