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InGaAs/GaAs quantum dot lasers
InGaAs quantum dots (QDs) grown by strained-layer epitaxy on GaAs can accommodate more In than planar growth and present an interesting approach for realizing GaAs-based laser diodes that operate inExpand
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Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
We demonstrate the growth of a low dislocation density, relaxed GaSb bulk layer on a (001) GaAs substrate. The strain energy generated by the 7.78% lattice mismatch is relieved by a periodic array ofExpand
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Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
The authors describe simultaneous interfacial misfit (IMF) array formation along with antiphase domain (APD) suppression in highly mismatched (Δa0/a0=13%) AlSb grown on a 5° miscut Si (001)Expand
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Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots. We show that highlyExpand
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Bottom-up photonic crystal lasers.
The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved viaExpand
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Low threshold half-wave vertical-cavity lasers
Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 AA from the single quantum well. The lowestExpand
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Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors
The interest in low-threshold vertical-cavity surface-emitting lasers (VCSEL's) is increased by the demonstration of the small size, low loss optical mode due to oxide-confinement in the Fabry-PerotExpand
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LOW THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS BASED ON HIGH CONTRAST DISTRIBUTED BRAGG REFLECTORS
Data are presented on vertical-cavity surface-emitting lasers that use high contrast distributed Bragg reflectors on both sides of the cavity. The upper reflector consists of a six pair ZnSe/MgFExpand
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Interfacial misfit array formation for GaSb growth on GaAs
The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocationExpand
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Formation trends in quantum dot growth using metalorganic chemical vapor deposition
We discuss the results of a growth matrix designed to produce high quantum dot (QD) density, defect-free QD ensembles, which emit at 1.3 μm using metalorganic chemical vapor deposition (MOCVD). InExpand
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