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- Publications
- Influence
InGaAs/GaAs quantum dot lasers
- D. Huffaker, G. Park, O. Shchekin, Z. Zhou, D. Deppe
- Physics
- Conference Proceedings. LEOS'98. 11th Annual…
- 1 December 1998
InGaAs quantum dots (QDs) grown by strained-layer epitaxy on GaAs can accommodate more In than planar growth and present an interesting approach for realizing GaAs-based laser diodes that operate in… Expand
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
- S. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L. Dawson, D. Huffaker
- Physics
- 30 March 2006
We demonstrate the growth of a low dislocation density, relaxed GaSb bulk layer on a (001) GaAs substrate. The strain energy generated by the 7.78% lattice mismatch is relieved by a periodic array of… Expand
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
- S. Huang, G. Balakrishnan, A. Khoshakhlagh, L. Dawson, D. Huffaker
- Physics
- 18 August 2008
The authors describe simultaneous interfacial misfit (IMF) array formation along with antiphase domain (APD) suppression in highly mismatched (Δa0/a0=13%) AlSb grown on a 5° miscut Si (001)… Expand
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
- D. Huffaker, D. Deppe
- Physics
- 21 July 1998
Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots. We show that highly… Expand
Bottom-up photonic crystal lasers.
- A. C. Scofield, Se-Heon Kim, +4 authors D. Huffaker
- Materials Science, Medicine
- Nano letters
- 18 November 2011
The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via… Expand
Low threshold half-wave vertical-cavity lasers
- D. Huffaker, Jeyong Shin, D. Deppe
- Mathematics
- 10 November 1994
Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 AA from the single quantum well. The lowest… Expand
Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors
- D. Deppe, D. Huffaker, T.-H. Oh, H. Deng, Q. Deng
- Physics
- 1 June 1997
The interest in low-threshold vertical-cavity surface-emitting lasers (VCSEL's) is increased by the demonstration of the small size, low loss optical mode due to oxide-confinement in the Fabry-Perot… Expand
LOW THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS BASED ON HIGH CONTRAST DISTRIBUTED BRAGG REFLECTORS
- D. Huffaker, D. Deppe
- Physics
- 7 April 1997
Data are presented on vertical-cavity surface-emitting lasers that use high contrast distributed Bragg reflectors on both sides of the cavity. The upper reflector consists of a six pair ZnSe/MgF… Expand
Interfacial misfit array formation for GaSb growth on GaAs
- S. Huang, G. Balakrishnan, D. Huffaker
- Physics
- 20 May 2009
The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocation… Expand
Formation trends in quantum dot growth using metalorganic chemical vapor deposition
- A. El-Emawy, S. Birudavolu, +4 authors D. Huffaker
- Physics
- 5 March 2003
We discuss the results of a growth matrix designed to produce high quantum dot (QD) density, defect-free QD ensembles, which emit at 1.3 μm using metalorganic chemical vapor deposition (MOCVD). In… Expand