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Journals and Conferences
The simulation and experimental analysis of SiC MESFET class E power amplifier with enhanced frequency band was carried out. A specific multi-resonant output matching network was used to obtain… (More)
In this paper, an experimental investigation of high-frequency Class-E power amplifier with shunt filter is presented. Using of a shunt LC filter in the load network instead of a series LC tank used… (More)
An experimental prototype of an amplifier with tuning on the second harmonics was built and investigated. It is shown that there are variants of tuning for ensuring high efficiency at low transistor… (More)
Class E oscillators are famous for their high efficiency. For their usage in modern electronic equipment, not just their power parameters but the noise characteristics are of interest. This paper… (More)
1 GHz microwave Doherty power amplifier (PA) using GaN MESFET NPTB00025 was designed. Influence of input power dividing ratio and negative gate bias voltages ratio of two class-B PAs on whole Doherty… (More)
A two-stage power amplifier for UWB systems transmitter was designed and simulated for implementing in standard 0.18-mum CMOS technology. Using cascode scheme and original biasing architecture allows… (More)
Calculation and simulation investigation of wideband power amplifiers of class E with the use of SiC and GaN MESFETs are carried out.
For the last decades the multilayered structures (1D, 2D and/or 3D) are widely investigated. First of all, this wide usage and analytical investigations directly connected to the unique properties of… (More)
Third-order intermodulation distortions (IMD) in two different cases of class-E power amplifiers (PA) using GaAs and SiC transistors are investigated.
In this paper, an experimental investigation of high-frequency Class-E power amplifier with shunt filter for different quality-factor is presented. Using of different loaded quality-factor of output… (More)