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- Publications
- Influence
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
- M. A. Steiner, J. Geisz, I. García, D. Friedman, A. Duda, S. Kurtz
- Physics
- 29 March 2013
The self-absorption of radiated photons increases the minority carrier concentration in semiconductor optoelectronic devices such as solar cells. This so-called photon recycling leads to an increase… Expand
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
The authors demonstrate a thin, Ge-free III–V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1sun global spectrum,… Expand
III-N-V semiconductors for solar photovoltaic applications
- J. Geisz, D. Friedman
- Chemistry
- 10 July 2002
III–N–V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range… Expand
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
- D. Jackrel, S. Bank, +6 authors S. Kurtz
- Materials Science
- 14 June 2007
Dilute nitride films with a roughly 1 eV band gap can be lattice-matched to gallium arsenide and germanium, and therefore could become a critical component in next-generation multijunction solar… Expand
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
- J. Geisz, D. Friedman, +7 authors K. Jones
- Physics
- 23 September 2008
A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III–V solar cell structure in which each active junction is composed… Expand
Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells
- J. Geisz, M. Steiner, I. García, S. Kurtz, D. Friedman
- Physics
- 25 July 2013
We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at… Expand
29.5%‐efficient GaInP/GaAs tandem solar cells
- K. A. Bertness, S. Kurtz, D. Friedman, A. Kibbler, C. Kramer, J. Olson
- Physics
- 22 August 1994
We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1‐sun concentration and air mass (AM) 1.5 global and 25.7% 1‐sun, AM0. These values represent the highest… Expand
Analysis of Multijunction Solar Cell Current–Voltage Characteristics in the Presence of Luminescent Coupling
- D. Friedman, J. Geisz, M. Steiner
- Materials Science
- IEEE Journal of Photovoltaics
- 18 September 2013
Luminescent coupling in multijunction solar cells is the phenomenon in which a junction in forward bias radiates photons that are absorbed in and converted to photocurrent by the junction beneath the… Expand
Temperature-dependent measurements of an inverted metamorphic multijunction (IMM) solar cell
- M. Steiner, J. Geisz, D. Friedman, W. Olavarria, A. Duda, T. Moriarty
- Materials Science
- 37th IEEE Photovoltaic Specialists Conference
- 19 June 2011
The inverted metamorphic multijunction (IMM) solar cell has demonstrated efficiencies as high as 40.8% at 25°C and 326 suns concentration. The actual operating temperature in a commercial module,… Expand
Structural changes during annealing of GaInAsN
- S. Kurtz, J. D. Webb, +6 authors N. Karam
- Chemistry
- 2 February 2001
The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve… Expand