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Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
We report values of pseudodielectric functions $〈\ensuremath{\epsilon}〉=〈{\ensuremath{\epsilon}}_{1}〉+i〈{\ensuremath{\epsilon}}_{2}〉$ measured by spectroscopic ellipsometry and refractive indicesExpand
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Optical properties of thin films
Abstract In this paper we discuss the connection between the microstructure of a heterogeneous thin film and its macroscopic dielectric response e. Effective medium theory is developed from aExpand
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Third-derivative modulation spectroscopy with low-field electroreflectance
Abstract The theoretical basis and experimental procedures are reviewed for third-derivative modulation spectroscopy, which is the same as low-field electroreflectance. The physical origin of theExpand
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Optical properties of AlxGa1−x As
We report pseudodielectric function 〈e〉 data for AlxGa1−xAs alloys of target compositions x=0.00–0.80 in steps of 0.10 grown by liquid‐phase epitaxy and measured by spectroellipsometry. CleaningExpand
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Dependence of plasmon polaritons on the thickness of indium tin oxide thin films
The evolution of polariton features with increasing thickness in p-polarized (TM) reflectance spectra of indium tin oxide (ITO) thin films deposited on BK7 glass reveals the nature of plasmons inExpand
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RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES
Abstract The present state of understanding of recent work on recombination processes at semiconductor surfaces and interfaces is assessed. The derivation of the phenomenological Stevenson-KeyesExpand
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Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE) growth chambers, and describe in detailExpand
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Optimizing precision of rotating-analyzer ellipsometers
General equations describing the theoretical uncertainty in the measurement of the complex reflectance ratio, ρ, are given for rotating-analyzer ellipsometers operating under shot-noise-limited,Expand
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