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- Publications
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Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
- D. E. Aspnes, A. A. Studna
- Materials Science
- 15 January 1983
We report values of pseudodielectric functions $〈\ensuremath{\epsilon}〉=〈{\ensuremath{\epsilon}}_{1}〉+i〈{\ensuremath{\epsilon}}_{2}〉$ measured by spectroscopic ellipsometry and refractive indices… Expand
Optical properties of thin films
- D. E. Aspnes
- Materials Science
- 19 March 1982
Abstract In this paper we discuss the connection between the microstructure of a heterogeneous thin film and its macroscopic dielectric response e. Effective medium theory is developed from a… Expand
Third-derivative modulation spectroscopy with low-field electroreflectance
- D. E. Aspnes
- Chemistry
- 1 June 1973
Abstract The theoretical basis and experimental procedures are reviewed for third-derivative modulation spectroscopy, which is the same as low-field electroreflectance. The physical origin of the… Expand
Optical properties of AlxGa1−x As
- D. E. Aspnes, S. Kelso, R. Logan, R. Bhat
- Physics
- 15 July 1986
We report pseudodielectric function 〈e〉 data for AlxGa1−xAs alloys of target compositions x=0.00–0.80 in steps of 0.10 grown by liquid‐phase epitaxy and measured by spectroellipsometry. Cleaning… Expand
Electric-Field Effects on Optical Absorption near Thresholds in Solids
- D. E. Aspnes
- Physics
- 15 July 1966
Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry
- D. E. Aspnes, J. B. Theeten, F. Hottier
- Materials Science
- 15 October 1979
Dependence of plasmon polaritons on the thickness of indium tin oxide thin films
- C. Rhodes, M. Cerruti, +4 authors S. Franzén
- Materials Science
- 7 May 2008
The evolution of polariton features with increasing thickness in p-polarized (TM) reflectance spectra of indium tin oxide (ITO) thin films deposited on BK7 glass reveals the nature of plasmons in… Expand
RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES
- D. E. Aspnes
- Materials Science
- 2 September 1983
Abstract The present state of understanding of recent work on recombination processes at semiconductor surfaces and interfaces is assessed. The derivation of the phenomenological Stevenson-Keyes… Expand
Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
- D. E. Aspnes, J. Harbison, A. A. Studna, L. Florez
- Chemistry
- 1 May 1988
We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE) growth chambers, and describe in detail… Expand
Optimizing precision of rotating-analyzer ellipsometers
- D. E. Aspnes
- Physics
- 1 May 1974
General equations describing the theoretical uncertainty in the measurement of the complex reflectance ratio, ρ, are given for rotating-analyzer ellipsometers operating under shot-noise-limited,… Expand